2013. 7. 15

1/8

SEMICONDUCTOR

TECHNICAL DATA

KGT15N135KDH

Revision No : 0

General Description

KEC NPT IGBTs offer low switching losses, high energy efficiency

and high avalanche ruggedness for soft switching application such as

IH(induction heating), microwave oven, etc.

FEATURES

・High speed switching

・High ruggedness, temperature stable behavior

・Soft current turn-off waveforms

・Extremely enhanced avalanche capability

MAXIMUM RATING (Ta=25

℃)

*Repetitive rating : Pulse width limited by max. junction temperature

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Emitter Voltage

1350

V

Gate-Emitter Voltage

±20

V

Collector Current

30

A

15

A

Pulsed Collector Current

45

A

Diode Continuous Forward Current

15

A

Diode Maximum Forward Current

45

A

Maximum Power Dissipation

150

W

60

W

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55 to + 150

℃

CHARACTERISTIC

SYMBOL

MAX.

UNIT

Thermal Resistance, Junction to Case (IGBT)

0.82

℃/W

Thermal Resistance, Junction to Case (DIODE)

2.3

℃/W

Thermal Resistance, Junction to Ambient

40

℃/W

THERMAL CHARACTERISTIC

E

C

G