NSS1C300ET4G datasheet(4/6 Pages) ONSEMI

Part #	NSS1C300ET4G

Description	100 V, 3.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS1C300ET4G

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4

TYPICAL CHARACTERISTICS

1.2

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 7. Base−Emitter On Voltage

1

0.8

0.6

0.4

0.2

0

VCE = 2 V

25

°C

−55

°C

150

°C

2

0.1

1

10

100

IB, BASE CURRENT (mA)

Figure 8. Collector Saturation Region

1.6

1.2

0.8

0.4

0

1000

TA = 25°C

IC = 3 A

1 A

2 A

0.5 A

0.1 A

1000

0.1

1

10

100

VR, REVERSE VOLTAGE (V)

Figure 9. Capacitance

100

10

Cib

Cob

1000

0.1

1

10

IC, COLLECTOR CURRENT (A)

Figure 10. Current−Gain−Bandwidth Product

VCE = 5 V

10

1

10

100

VCE, COLLECTOR EMITTER VOLTAGE (V)

Figure 11. Safe Operating Area

1

0.01

100 ms

1.0 s

10 ms

100

10

0.01

0.1

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NSS1C300ET4G Datasheet(PDF) 4 Page - ON Semiconductor

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