NSS30201MR6T1G_11 datasheet(4/6 Pages) ONSEMI

Part #	NSS30201MR6T1G

Description	30 V, 3 A, Low VCE(sat) NPN Transistor

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NSS30201MR6T1G, SNSS30201MR6T1G

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Figure 1. VCE (sat) versus Ib

0.001

0.2

0.01

0.1

1.0

0

0.1

Ib (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Figure 2. VCE (sat) versus Ic

0.001

2

0.01

0.1

1.0

0

0.1

Ic (A)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

IC = 2 A

IC = 1 A

IC = 500 mA

IC = 100 mA

Ic/Ib = 100

Ic/Ib = 10

Figure 3. hFE versus Ic

Figure 4. VBE(on) versus Ic

0.001

2

0.01

0.1

1.2

0

Ic (A)

0.2

0.4

0.6

0.8

Figure 5. VBE(sat) versus Ic

0.001

2

0.01

0.1

1.2

0

Ic (A)

0.2

0.4

0.6

0.8

1.0

Figure 6. Safe Operating Area

VCE(sat) (V)

1

1.0

+125C

+25C

−55C

VCE = 5 V

1

Ic/Ib = 100

Ic/Ib = 10

0.01

0.10

1.00

10.00

0.10

1.00

10.00

100.00

100 ms

10 ms

1 ms

SINGLE PULSE Tamb = 25C

1 s

dc

3.0

0.001

2

0.01

0.1

800

0

100

Ic (A)

200

300

400

500

600

700

1

+125C

+25C

−55C

VCE = 5 V

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NSS30201MR6T1G Datasheet(PDF) 4 Page - ON Semiconductor

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