NSS40300MDR2G datasheet(1/6 Pages) ONSEMI

Part #	NSS40300MDR2G

Description	Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 2

1

Publication Order Number:

NSS40300MD/D

NSS40300MDR2G,

NSV40300MDR2G

Dual Matched 40 V, 6.0 A,

Low VCE(sat) PNP Transistor

These transistors are part of the ON Semiconductor e2PowerEdge

family of Low VCE(sat) transistors. They are assembled to create a pair

of devices highly matched in all parameters, including ultra low

saturation voltage VCE(sat), high current gain and Base/Emitter turn on

voltage.

Typical applications are current mirrors, differential amplifiers,

DC−DC converters and power management in portable and battery

powered products such as cellular and cordless phones, PDAs,

computers, printers, digital cameras and MP3 players. Other

applications are low voltage motor controls in mass storage products

such as disc drives and tape drives. In the automotive industry they can

be used in air bag deployment and in the instrument cluster. The high

current gain allows e2PowerEdge devices to be driven directly from

PMU’s control outputs, and the Linear Gain (Beta) makes them ideal

components in analog amplifiers.

Features

 Current Gain Matching to 10%

 Base Emitter Voltage Matched to 2 mV

 AEC−Q101 Qualified and PPAP Capable

 NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements

 These are Pb−Free Devices*

MAXIMUM RATINGS (TA = 25C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

−40

Vdc

Collector-Base Voltage

VCBO

−40

Vdc

Emitter-Base Voltage

VEBO

−7.0

Vdc

Collector Current − Continuous

IC

−3.0

A

Collector Current − Peak

ICM

−6.0

A

Electrostatic Discharge

ESD

HBM Class 3B

MM Class C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping†

ORDERING INFORMATION

NSS40300MDR2G

SOIC−8

(Pb−Free)

2,500 /

Tape & Reel

MARKING DIAGRAM

SOIC−8

CASE 751

STYLE 29

http://onsemi.com

40 VOLTS

6.0 AMPS

PNP LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 80 mW

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

COLLECTOR

7,8

1

BASE

2

EMITTER

COLLECTOR

5,6

3

BASE

4

EMITTER

P40300

AYWWG

G

1

8

P40300 = Specific Device Code

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

NSV40300MDR2G

SOIC−8

(Pb−Free)

2,500 /

Tape & Reel

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