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IRG4IBC30SPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4IBC30SPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4IBC30SPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 50 75 IC = 18A Qge Gate - Emitter Charge (turn-on) — 7.3 11 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 17 26 VGE = 15V td(on) Turn-On Delay Time — 22 — tr Rise Time — 18 — TJ = 25°C td(off) Turn-Off Delay Time — 540 810 IC = 18A, VCC = 480V tf Fall Time — 390 590 VGE = 15V, RG = 23 Ω Eon Turn-On Switching Loss — 0.26 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 3.45 — mJ See Fig. 9, 10, 14 Ets Total Switching Loss — 3.71 5.6 td(on) Turn-On Delay Time — 21 — TJ = 150°C, tr Rise Time — 19 — IC = 18A, VCC = 480V td(off) Turn-Off Delay Time — 790 — VGE = 15V, RG = 23 Ω tf Fall Time — 760 — Energy losses include "tail" Ets Total Switching Loss — 6.55 — mJ See Fig. 10, 11, 14 LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 1100 — VGE = 0V Coes Output Capacitance — 72 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 19 — ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA — 1.40 1.6 IC = 18A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 1.84 — IC = 34A See Fig.2, 5 — 1.45 — IC = 18A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 6.0 11 — S VCE = 100 V, IC = 18A — — 250 VGE = 0V, VCE = 600V — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See Fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
Similar Part No. - IRG4IBC30SPBF_15 |
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Similar Description - IRG4IBC30SPBF_15 |
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