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PEMH30_PUMH30 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PEMH30_PUMH30 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page PEMH30_PUMH30_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 28 March 2006 3 of 10 Philips Semiconductors PEMH30; PUMH30 NPN/NPN double resistor-equipped transistors; R1 = 2.2 k Ω, R2 = open 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V IO output current - 100 mA ICM peak collector current single pulse; tp ≤ 1ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT363 [1] - 200 mW SOT666 [1][2] - 200 mW Per device Ptot total power dissipation Tamb ≤ 25 °C SOT363 [1] - 300 mW SOT666 [1][2] - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air SOT363 [1] - - 625 K/W SOT666 [1][2] - - 625 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air SOT363 [1] - - 416 K/W SOT666 [1][2] - - 416 K/W |
Similar Part No. - PEMH30_PUMH30_15 |
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Similar Description - PEMH30_PUMH30_15 |
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