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IRG4PC50F-EPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC50F-EPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRG4PC50F-EPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 190 290 IC = 39A Qge Gate - Emitter Charge (turn-on) 28 42 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) 65 97VGE = 15V td(on) Turn-On Delay Time 31 tr Rise Time 25 TJ = 25°C td(off) Turn-Off Delay Time 240 350 IC = 39A, VCC = 480V tf Fall Time 130 190 VGE = 15V, RG = 5.0Ω Eon Turn-On Switching Loss 0.37 Energy losses include "tail" Eoff Turn-Off Switching Loss 2.1 mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss 2.473.0 td(on) Turn-On Delay Time 28 TJ = 150°C, tr Rise Time 24 IC = 39A, VCC = 480V td(off) Turn-Off Delay Time 390 VGE = 15V, RG = 5.0Ω tf Fall Time 230 Energy losses include "tail" Ets Total Switching Loss 5.0 mJ See Fig. 13, 14 LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 4100 VGE = 0V Coes Output Capacitance 250 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 49 = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.62 V/°C VGE = 0V, IC = 1.0mA 1.45 1.6 IC = 39A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 1.79 IC = 70A See Fig.2, 5 1.53 IC = 39A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -14 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
21 30 S VCE = 100V, IC = 39A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
Similar Part No. - IRG4PC50F-EPBF_15 |
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Similar Description - IRG4PC50F-EPBF_15 |
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