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IRG4PH50UDPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PH50UDPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  04/26/04 IRG4PH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features E G n-channel C VCES = 1200V VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 45 IC @ TC = 100°C Continuous Collector Current 24 A ICM Pulsed Collector Current Q 180 ILM Clamped Inductive Load Current R 180 IF @ TC = 100°C Diode Continuous Forward Current 16 IFM Diode Maximum Forward Current 180 VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 200 PD @ TC = 100°C Maximum Power Dissipation 78 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings W Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT ––– ––– 0.64 RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.24 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz) Thermal Resistance www.irf.com 1 PD -95190 • Lead-Free |
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