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NCP3335AMN330R2G Datasheet(PDF) 8 Page - ON Semiconductor

Part # NCP3335AMN330R2G
Description  Ultra High Accuracy, Low Iq, 500 mA Low Dropout Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP3335AMN330R2G Datasheet(HTML) 8 Page - ON Semiconductor

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NCP3335A
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8
ELECTRICAL CHARACTERISTICS − 2.85 V (Vout = 2.85 V typical, Vin = 3.25 V, TA = −40°C to +85°C, unless otherwise noted, Note 8)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
2.824
2.85
+0.9%
2.876
V
Output Voltage (Accuracy)
Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
2.810
2.85
+1.4%
2.890
V
Output Voltage (Accuracy) (Note 9)
Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
2.807
2.85
+1.5%
2.893
V
Line Regulation
Vin = 3.25 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 3.25 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1mA
VDO
340
230
110
10
mV
Peak Output Current (See Figure 16)
Ipk
500
700
800
mA
Short Output Current (See Figure 16)
Isc
900
mA
Thermal Shutdown
TJ
160
°C
Ground Current
In Regulation
Iload = 500 mA (Note 10)
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
In Dropout
Vin = 2.75 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
IGND
IGNDsh
9.0
4.6
0.8
0.07
14
7.5
2.5
190
500
1.0
mA
mA
mA
mA
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
61
40
mVrms
mVrms
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
2.0
0.4
V
V
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 2.85 V)
IOUTR
10
mA
8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. For output current capability for TA < 0°C, please refer to Figure 18.
10.TA must be greater than 0°C.


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