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AUIRF1010ZL Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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AUIRF1010ZL Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 15 page  AUIRF1010Z/S/L 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.05mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25°C, L = 0.05mH, RG = 25, IAS = 75A, VGS =10V. This is only applied to TO-220AB pakcage. This is applied to D2Pak, when mounted on 1" square PCB (FR- 4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Ris measured at TJ approximately 90°C. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.049 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.8 7.5 m VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 33 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 63 95 Qgs Gate-to-Source Charge ––– 19 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 24 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 150 ––– td(off) Turn-Off Delay Time ––– 36 ––– ns tf Fall Time ––– 92 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2840 ––– Coss Output Capacitance ––– 420 ––– Crss Reverse Transfer Capacitance ––– 250 ––– pF Coss Output Capacitance ––– 1630 ––– Coss Output Capacitance ––– 360 ––– Coss eff. Effective Output Capacitance ––– 560 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 75 (Body Diode) A ISM Pulsed Source Current ––– ––– 360 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 22 33 ns Qrr Reverse Recovery Charge ––– 15 23 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V f VGS = 10V e VDD = 28V ID = 75A RG = 6.8 TJ = 25°C, IS = 75A, VGS = 0V e TJ = 25°C, IF = 75A, VDD = 25V di/dt = 100A/μs e Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 75A e VDS = VGS, ID = 250μA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = 25V, ID = 75A ID = 75A VDS = 44V Conditions VGS = 10V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 20V VGS = -20V |
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