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AUIRF1324L Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # AUIRF1324L
Description  AUTOMOTIVE GRADE
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AUIRF1324L Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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03/29/2010
www.irf.com
1
HEXFET® Power MOSFET
S
D
G
GD
S
Gate
Drain
Source
PD - 97483
AUIRF1324S
AUIRF1324L
D2Pak
AUIRF1324S
TO-262
AUIRF1324L
G
D
S
GD
S
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switch-
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
VDSS
24V
RDS(on) typ.
1.3m
ID (Silicon Limited)
340Ac
ID (Package Limited)
195A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
IAR
Avalanche Current
Ãd
A
EAR
Repetitive Avalanche Energy
d
mJ
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
°C/W
RθJA
Junction-to-Ambient (PCB Mounted, steady-state)
j
–––
40
Max.
340
240
1420
195
A
°C
300
-55 to + 175
± 20
2.0
270
See Fig. 14, 15, 22a, 22b
300
0.46


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