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AUIRF1324L Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 13 page 03/29/2010 www.irf.com 1 HEXFET® Power MOSFET S D G GD S Gate Drain Source PD - 97483 AUIRF1324S AUIRF1324L D2Pak AUIRF1324S TO-262 AUIRF1324L G D S GD S Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switch- ing speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ AUTOMOTIVE GRADE VDSS 24V RDS(on) typ. 1.3m Ω ID (Silicon Limited) 340Ac ID (Package Limited) 195A Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) e mJ IAR Avalanche Current Ãd A EAR Repetitive Avalanche Energy d mJ dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.50 °C/W RθJA Junction-to-Ambient (PCB Mounted, steady-state) j ––– 40 Max. 340 240 1420 195 A °C 300 -55 to + 175 ± 20 2.0 270 See Fig. 14, 15, 22a, 22b 300 0.46 |
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