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AUIRF2807 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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AUIRF2807 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 11 page  AUIRF2807 11/09/11 www.irf.com 1 Features l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. AUTOMOTIVE GRADE S D G HEXFET® Power MOSFET GD S Gate Drain Source TO-220AB AUIRF2807 D S D G V(BR)DSS 75V RDS(on) max. 13m Ω ID(Silicon Limited) 82A h ID (Package Limited) 75A HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pro- vides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy dg mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.65 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 ±20 5.9 43 23 10 lbf yin (1.1Nym) -55 to + 175 °C/W 300 (1.6mm from case ) W 340 230 Max. 82 h 58 280 75 1.5 PD - 96384A |
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