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AUIRF3205 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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AUIRF3205 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 11 page  AUIRF3205 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 138μH, RG = 25, IAS = 62A. (See Figure 12) ISD 62A, di/dt 207A/μs, VDD V(BR)DSS, TJ 175°C. Pulse width 400μs; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C. Ris measured at TJ of approximately 90°C. S D G Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 8.0 m VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 44 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 25 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– ––– 146 Qgs Gate-to-Source Charge ––– ––– 35 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 54 td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 101 ––– td(off) Turn-Off Delay Time ––– 50 ––– ns tf Fall Time ––– 65 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 3247 ––– Coss Output Capacitance ––– 781 ––– pF Crss Reverse Transfer Capacitance ––– 211 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 110 (Body Diode) A ISM Pulsed Source Current ––– ––– 390 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 69 104 ns Qrr Reverse Recovery Charge ––– 143 215 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) TJ = 25°C, IF = 62A di/dt = 100A/μs f TJ = 25°C, IS = 62A, VGS = 0V f showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 62A f VDS = VGS, ID = 250μA VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C MOSFET symbol VDD = 28V ID = 62A RG = 4.5 Conditions VGS = 10V, See Fig. 10 f VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 Conditions VDS = 25V, ID = 62A f ID = 62A VDS = 44V VGS = 20V VGS = -20V VGS = 10V, See Fig. 6 & 13 f |
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