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AUIRF7484Q Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 13 page HEXFET® Power MOSFET www.irf.com 1 AUIRF7484Q 01/26/12 PD - 97757 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. AUTOMOTIVE GRADE HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Features l Advanced Planar Technology l Low On-Resistance l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. SO-8 AUIRF7484Q V(BR)DSS 40V RDS(on) max. 10m ID 14A Parameter Units VDS Drain-Source Voltage V ID @ TA = 25°C Continuous Drain Current ID @ TA = 70°C Continuous Drain Current A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation e W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) f mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RJL Junction-to-Drain Lead ––– 20 °C/W RJA Junction-to-Ambient e ––– 50 °C/W Max. 14 11 110 40 -55 to + 150 2.5 0.02 See Fig. 16c, 16d, 19, 20 ± 8.0 230 |
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