 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AUIRFP2907 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
|
||||||||||||||||||||||||||||||
AUIRFP2907 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
|
|
1 / 12 page  AUIRFP2907 HEXFET® Power MOSFET 08/11/11 www.irf.com 1 PD -97692A S D G Features l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allow ed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ GD S Gate Drain Source V(BR)DSS 75V RDS(on) typ. 3.6m Ω max 4.5m Ω ID (Silicon Limited) 209Ah ID (Package Limited) 90A Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current c PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy c mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 0.32 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 5.0 1970 See Fig. 12a, 12b, 15, 16 470 3.1 ± 20 Max. 209 h 148 h 840 90 -55 to + 175 300 10 lbf yin (1.1Nym) AUTOMOTIVE GRADE TO-247AC AUIRFP2907 S D G D |
Similar Part No. - AUIRFP2907 |
|
Similar Description - AUIRFP2907 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
