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AUIRFR1018E Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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AUIRFR1018E Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 12 page  06/17/11 www.irf.com 1 HEXFET® Power MOSFET PD - 97685 AUIRFR1018E S D G VDSS 60V RDS(on) typ. 7.1m: max. 8.4m: ID (Silicon Limited) 79A c ID (Package Limited) 56A AUTOMOTIVE GRADE Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. GD S Gate Drain Source D-Pak AUIRFR1018E G S D HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) A IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally limited) e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy e mJ dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 1.32 RθJA Junction-to-Ambient (PCB Mount) j ––– 50 RθJA Junction-to-Ambient ––– 110 11 56 c 110 21 -55 to + 175 ± 20 0.76 88 47 °C/W 300 Max. 79 c 56 315 |
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