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IRG7PSH73K10PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG7PSH73K10PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRG7PSH73K10PbF 2 www.irf.com Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) VCC = 80% (VCES), VGE = 20V, L = 20μH, RG = 5.0Ω. Pulse width ≤ 400μs; duty cycle ≤ 2%. Refer to AN-1086 for guidelines for measuring V (BR)CES safely.
Rθ is measured at TJ of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250μA f ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 1.58 — V/°C VGE = 0V, IC = 5.0mA (25°C-175°C) f —2.0 2.3 IC = 75A, VGE = 15V, TJ = 25°C e VCE(on) Collector-to-Emitter Saturation Voltage — 2.50 — V IC = 75A, VGE = 15V, TJ = 150°C e —2.60 — IC = 75A, VGE = 15V, TJ = 175°C e VGE(th) Gate Threshold Voltage 5.0 — 7.5 V VCE = VGE, IC = 3.5mA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 3.5mA (25°C - 175°C) gfe Forward Transconductance — 53 — S VCE = 50V, IC = 75A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 1.0 25 VGE = 0V, VCE = 1200V, TJ = 25°C — 2340 — VGE = 0V, VCE = 1200V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±400 nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 360 540 IC = 75A e Qge Gate-to-Emitter Charge (turn-on) — 87 130 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 180 270 VCC = 600V Eon Turn-On Switching Loss — 7.7 8.7 IC = 75A, VCC = 600V, VGE = 15V e Eoff Turn-Off Switching Loss — 4.6 5.6 mJ RG = 4.7Ω, L = 200μH, TJ = 25°C Etotal Total Switching Loss — 12.3 14.3 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 63 81 IC = 75A, VCC = 600V, VGE = 15VÃe tr Rise time — 118 138 ns RG = 4.7Ω, L = 200μH, TJ = 25°C td(off) Turn-Off delay time — 267 291 tf Fall time — 114 134 Eon Turn-On Switching Loss — 11 — IC = 75A, VCC = 600V, VGE=15VÃe Eoff Turn-Off Switching Loss — 7.4 — mJ RG=4.7Ω, L=200μH, TJ = 175°C Etotal Total Switching Loss — 18.4 — Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 62 — IC = 75A, VCC = 600V, VGE=15V e tr Rise time — 110 — ns RG = 4.7Ω, L = 200μH td(off) Turn-Off delay time — 330 — TJ = 175°C tf Fall time — 237 — Cies Input Capacitance — 9450 — pF VGE = 0V Coes Output Capacitance — 340 — VCC = 30V Cres Reverse Transfer Capacitance — 230 — f = 1.0Mhz IC = 300A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V Rg = 4.7 Ω, VGE = +20V to 0V, TJ =175°C SCSOA Short Circuit Safe Operating Area 10 — — μsVCC = 600V, Vp =1200V ,TJ = 150°C Rg = 4.7 Ω, VGE = +15V to 0V Conditions μA |
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