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1PS74SB23 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PS74SB23 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2003 Aug 04 3 Philips Semiconductors Product specification Schottky barrier diode 1PS74SB23 ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SC-74 (SOT457) standard mounting conditions. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 100 mA 260 300 mV IF = 1 A 400 450 mV IR reverse current VR = 20 V; note 1; see Fig.3 80 500 µA VR = 25 V; note 1; see Fig.3 − 1mA Cd diode capacitance f = 1 MHz; VR = 4 V; see Fig.4 100 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 250 K/W |
Similar Part No. - 1PS74SB23_15 |
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Similar Description - 1PS74SB23_15 |
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