Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRG7P4263PbF

TO-247AC

Tube

25

IRGP4263PbF

IRG7P4263-EPbF

TO-247AD

Tube

25

IRGP4263-EPbF

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

650

V

Continuous Collector Current

90

Continuous Collector Current

60

192

192

Continuous Gate-to-Emitter Voltage

±20

V

Maximum Power Dissipation

300

W

Maximum Power Dissipation

150

Operating Junction and

-40 to +175

C

Storage Temperature Range

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw

10 lbf·in (1.1 N·m)

A  

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Thermal Resistance Junction-to-Case-(each IGBT) 

–––

–––

0.5

°C/W

Thermal Resistance, Case-to-Sink (flat, greased surface)

–––

0.24

–––

Thermal Resistance, Junction-to-Ambient (typical socket mount)

–––

40

–––

G

C

E

Gate

Collector

Emitter

Applications

• Industrial Motor Drive

• Inverters

• UPS

• Welding

Features

Benefits

High efficiency in a wide range of applications and

switching frequencies

Square RBSOA and maximum junction temperature 175°C

Improved reliability due to rugged hard switching

performance and higher power capability

Excellent current sharing in parallel operation

5.5µs short circuit SOA

Enables short circuit protection scheme

Lead-free, RoHS compliant

Environmentally friendly

 

IRGP4263PbF

IRGP4263-EPbF

Insulated Gate Bipolar Transistor

E

C

G

n-channel

 

 

 

IRGP4263-EPbF

TO-247AD

G

E

C

G

C

E

IRGP4263PbF

TO247AC

1

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August 21, 2014