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IRGP4650DPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRGP4650DPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 12 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGP4650DPbF IRGP4650D-EPbF TO-247AC IRGP4650DPbF TO-247AD IRGP4650D-EP E G n-channel C GC E Gate Collector Emitter Applications • Industrial Motor Drive • Inverters • UPS • Welding VCES = 600V IC = 50A, TC = 100°C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 35A Form Quantity IRGP4650DPbF TO-247AC Tube 25 IRGP4650DPbF IRGP4650D-EPbF TO-247AD Tube 25 IRGP4650D-EPbF Base part number Package Type Standard Pack Orderable part number Features Benefits Low VCE(ON) and Switching Losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and Maximum Junction Temperature 175°C Improved reliability due to rugged hard switching performance and higher power capability Positive VCE (ON) Temperature Coefficient Excellent current sharing in parallel operation 5μs short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly G G C E C C E C www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014 1 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 76 IC @ TC = 100°C Continuous Collector Current 50 ICM Pulse Collector Current, VGE = 15V 105 A ILM Clamped Inductive Load Current, VGE = 20V c 140 IF @ TC = 25°C Diode Continous Forward Current 76 IF @ TC = 100°C Diode Continous Forward Current 50 IFM Diode Maximum Forward Current f 140 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 268 PD @ TC = 100°C Maximum Power Dissipation 134 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Junction-to-Case (IGBT) d ––– ––– 0.56 RθJC (Diode) Junction-to-Case (Diode) d ––– ––– 1.0 RθCS Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40 °C/W W |
Similar Part No. - IRGP4650DPBF_15 |
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Similar Description - IRGP4650DPBF_15 |
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