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IRGP6690DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP6690DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  IRGP6690DPbF/IRGP6690D-EPbF 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.55 — V/°C VGE = 0V, IC = 3mA (25°C-175°C) VCE(on) Collector-to-Emitter Saturation Voltage — 1.65 1.95 IC = 75A, VGE = 15V, TJ = 25°C — 2.10 — IC = 75A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 2.1mA ΔVGE(th)/ΔTJ Threshold Voltage Temperature Coeff. — -19 — mV/°C VCE = VGE, IC = 2.1mA (25°C-175°C) gfe Forward Transconductance — 50 — S VCE = 50V, IC = 75A, PW = 20µs ICES Collector-to-Emitter Leakage Current — 1.5 100 µA VGE = 0V, VCE = 600V — 1.4 — VGE = 0V, VCE = 600V, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±200 nA VGE = ±20V VFM — 2.3 3.3 V IF = 18A — 1.5 — IF = 18A, TJ = 175°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max Units Conditions Qg Total Gate Charge — 140 — nC IC = 75A Qge Gate-to-Emitter Charge — 40 — VGE = 15V Qgc Gate-to-Collector Charge — 60 — VCC = 400V Eon Turn-On Switching Loss — 2.4 — mJ IC = 75A, VCC = 400V, VGE=15V RG = 10 Ω, L = 400µH, TJ = 25°C Energy losses include tail & diode reverse recovery Eoff Turn-Off Switching Loss — 2.2 — Etotal Total Switching Loss — 4.6 — td(on) Turn-On delay time — 85 — ns tr Rise time — 86 — td(off) Turn-Off delay time — 222 — tf Fall time — 53 — Eon Turn-On Switching Loss — 3.1 — mJ IC = 75A, VCC = 400V, VGE=15V RG = 10 Ω, L = 400µH, TJ = 175°C Energy losses include tail & diode reverse recovery Eoff Turn-Off Switching Loss — 2.8 — Etotal Total Switching Loss — 5.9 — td(on) Turn-On delay time — 67 — ns tr Rise time — 92 — td(off) Turn-Off delay time — 227 — tf Fall time — 78 — Cies Input Capacitance — 4720 — VGE = 0V Coes Output Capacitance — 270 — pF VCC = 30V Cres Reverse Transfer Capacitance — 140 — f = 1.0MHz RBSOA Reverse Bias Safe Operating Area TJ = 175°C, IC = 300A FULL SQUARE VCC = 480V, Vp ≤ 600V VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 210 — µJ TJ = 175°C trr Diode Reverse Recovery Time — 90 — ns VCC = 400V, IF = 18A Irr Peak Reverse Recovery Current — 26 — A VGE = 15V, Rg = 10 Ω Diode Forward Voltage Drop — 2.05 — IC = 75A, VGE = 15V, TJ = 150°C V mA Notes: VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 10 Ω. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. |
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