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IRGPS66160DPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRGPS66160DPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page IRGPS66160DPbF 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 13, 2014 Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGPS66160DPbF Super 247 Tube 25 IRGPS66160DPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 240 IC @ TC = 100°C Continuous Collector Current 160 ICM Pulse Collector Current, VGE = 15V 360 ILM Clamped Inductive Load Current, VGE = 20V 480 IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 80 IFM Diode Maximum Forward Current 480 VGE Continuous Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 750 W PD @ TC = 100°C Maximum Power Dissipation 375 TJ Operating Junction and -40 to +175 °C TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) A Thermal Resistance Parameter Min. Typ. Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.20 °C/W RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40 RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.37 VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications Welding H Bridge Converters Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Square RBSOA and Maximum Temperature of 175°C Improved Reliability due to Rugged Hard Switching Performance and High Power Capability 5µs Short Circuit Enables Short Circuit Protection Operation Positive VCE (ON) Temperature Co-efficient Excellent Current Sharing in Parallel Operation Lead-free, RoHS compliant Environmentally friendly G C E Gate Collector Emitter Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode E G n-channel C IRGPS66160DPbF Super 247 |
Similar Part No. - IRGPS66160DPBF_15 |
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Similar Description - IRGPS66160DPBF_15 |
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