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IRL40S212 Datasheet(PDF) 2 Page - International Rectifier

Part # IRL40S212
Description  Brushed Motor drive applications
Download  12 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL40S212 Datasheet(HTML) 2 Page - International Rectifier

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IRL40B212/IRL40S212
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
April 27, 2015
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
0.65
RCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RJA
Junction-to-Ambient 
–––
62
°C/W  
RJA
Junction-to-Ambient (PCB Mount) 
–––
40
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
254
A  
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
179
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
IDM
Pulsed Drain Current 
990 *
PD @TC = 25°C
Maximum Power Dissipation
231
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
342
mJ
EAS (Thermally limited)
Single Pulse Avalanche Energy 
790
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b
A
EAR
Repetitive Avalanche Energy 
mJ
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
Reference to 25°C, ID = 2mA 
RDS(on)
–––
1.5
1.9
m

VGS = 10V, ID = 100A
–––
1.9
2.4
VGS = 4.5V, ID = 50A 
VGS(th)
Gate Threshold Voltage
1.0
–––
2.4
V
VDS = VGS, ID = 150µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 40 V, VGS = 0V
–––
–––
150
VDS = 40V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
1.6
–––

Static Drain-to-Source On-Resistance
Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 100A, VGS =10V.
ISD  100A, di/dt  950A/µs, VDD  V(BR)DSS, TJ  175°C.
Pulse width
 400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
Ris measured at TJ approximately 90°C.
When mounted
on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 40A, VGS =10V. 
* Pulse drain current is limited at 780A by source bonding technology.


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