Electronic Components Datasheet Search |
|
IRL40S212 Datasheet(PDF) 2 Page - International Rectifier |
|
IRL40S212 Datasheet(HTML) 2 Page - International Rectifier |
2 / 12 page IRL40B212/IRL40S212 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.65 RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 °C/W RJA Junction-to-Ambient (PCB Mount) ––– 40 Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 254 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 179 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195 IDM Pulsed Drain Current 990 * PD @TC = 25°C Maximum Power Dissipation 231 W Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 342 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 790 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 2mA RDS(on) ––– 1.5 1.9 m VGS = 10V, ID = 100A ––– 1.9 2.4 VGS = 4.5V, ID = 50A VGS(th) Gate Threshold Voltage 1.0 ––– 2.4 V VDS = VGS, ID = 150µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 40 V, VGS = 0V ––– ––– 150 VDS = 40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 1.6 ––– Static Drain-to-Source On-Resistance Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 950A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 40A, VGS =10V. * Pulse drain current is limited at 780A by source bonding technology. |
Similar Part No. - IRL40S212 |
|
Similar Description - IRL40S212 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |