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BAS19_20_21 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BAS19_20_21 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 10 page  2003 Mar 20 3 NXP Semiconductors Product data sheet General purpose diodes BAS19; BAS20; BAS21 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BAS19 − 120 V BAS20 − 200 V BAS21 − 250 V VR continuous reverse voltage BAS19 − 100 V BAS20 − 150 V BAS21 − 200 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 625 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.7 A Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
Similar Part No. - BAS19_20_21_15 |
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Similar Description - BAS19_20_21_15 |
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