BAP70-02

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 7 — 16 April 2014

2 of 8

NXP Semiconductors

BAP70-02

Silicon PIN diode

5.

Limiting values

6.

Thermal characteristics

7.

Characteristics

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

continuous voltage

-

50

V

forward current

continuous current

-

100

mA

total power dissipation

-

415

mW

storage temperature

65

+150

C

junction temperature

65

+150

C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to solder point

145

K/W

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.9

1.1

V

reverse current

-

-

100

nA

diode capacitance

see Figure 1; f = 1 MHz;

-

570

-

fF

-

400

-

fF

-

270

-

fF

-

200

250

fF

diode forward resistance

see Figure 2; f = 100 MHz;

-

77

100



-

40

50



-

5.4

7



-

1.4

1.9





L

charge carrier life time

-1.25

-

s

series inductance

-

0.6

-

nH