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MAX1458AAE Datasheet(PDF) 11 Page - Maxim Integrated Products |
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MAX1458AAE Datasheet(HTML) 11 Page - Maxim Integrated Products |
11 / 20 page high. In addition, the EEPROM should only be written to at TA = +25°C and VDD = 5V. Writing to the internal EEPROM is a time-consuming process and should only be required once. All calibra- tion/compensation coefficients are determined by writ- ing directly to the DAC and configuration registers. Use the following procedure to write these calibration/com- pensation coefficients to the EEPROM: 1) Issue an ERASE EEPROM command. 2) Wait 50ms (tWRITE). 3) Issue on END EEPROM WRITE command at address 00h. 4) Wait 1ms (tWAIT). 5) Issue a BEGIN EEPROM WRITE command (Figure 7) at the address of the bit to be set. 6) Wait 50ms. 7) Issue an END EEPROM WRITE command (Figure 7) using the same address as in Step 5. 8) Wait 1ms. 9) Return to Step 5 until all necessary bits have been set. 10) Read EEPROM to verify that the correct calibra- tion/compensation coefficients have been stored. READ EEPROM Command The READ EEPROM command returns the bit stored at the memory location addressed by the lower seven bits of the data field (A0–A6). The higher bits of the data field (A7–A11) are ignored. Note that after a read com- mand has been issued, the DIO lines become an out- put and the state of the addressed EEPROM location will be available on DIO 200µs (tREAD) after the falling edge of the 16th SCLK cycle (Figure 8). After issuing the READ EEPROM command, DIO returns to input mode on the falling edge of CS. Reading the entire EEPROM requires the READ EEPROM command be issued 128 times. 1%-Accurate, Digitally Trimmed Sensor Signal Conditioner ______________________________________________________________________________________ 11 Figure 7. Begin WRITE EEPROM and End WRITE EEPROM Timing Diagrams SCLK SCLK DIO DATA LSB MSB MSB LSB MSB LSB COMMAND DATA LSB MSB MSB LSB COMMAND 16-BIT COMMAND WORD – BEGIN EEPROM WRITE AT ADDRESS COMMAND LSB MSB 16-BIT COMMAND WORD – END EEPROM WRITE AT ADDRESS COMMAND A0 A1 A2 A3 A4 A5 A6 0 0 0 0 0 0 0 0 1 DIO A0 A1 A2 A3 A4 A5 A6 0 0 0 0 0 1 1 0 0 Figure 8. READ EEPROM Timing Diagram SCLK tMIN = 200µs CS DIO 16 CLOCK CYCLES INIT SEQUENCE A0 X 1 0 1 0 U 0 A1 A2 A3 A4 A5 A6 0 0 0 0 0 0 0 X X EE DATA DIO IS AN OUTPUT PIN 1 1 tREAD READ EEPROM AT ADDRESS COMMAND DIO IS AN INPUT PIN |
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