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IRLI530NPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLI530NPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRLI530NPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.122 V/°C Reference to 25°C, ID = 1mA 0.100 VGS = 10V, ID = 9.0A 0.120 Ω VGS = 5.0V, ID = 9.0A 0.150 VGS = 4.0V, ID = 8.0A VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 7.7 S VDS = 50V, ID = 9.0A 25 µA VDS = 100V, VGS = 0V 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 nA VGS = 16V Gate-to-Source Reverse Leakage -100 VGS = -16V Qg Total Gate Charge 34 ID = 9.0A Qgs Gate-to-Source Charge 4.8 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge 20 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time 7.2 VDD = 50V tr Rise Time 53 ns ID = 9.0A td(off) Turn-Off Delay Time 30 RG = 6.0Ω, VGS = 5.0V tf Fall Time 26 RD = 5.5Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance 800 VGS = 0V Coss Output Capacitance 160 VDS = 25V Crss Reverse Transfer Capacitance 90 = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance 12 = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current S D G LD Internal Drain Inductance 4.5 LS Internal Source Inductance 7.5 RDS(on) Static Drain-to-Source On-Resistance nH pF S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 9.0A. (See Figure 12)
t=60s, =60Hz I SD ≤ 9.0A, di/dt ≤ 540A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C Uses IRL530N data and test conditions Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V trr Reverse Recovery Time 140 210 ns TJ = 25°C, IF = 9.0A Qrr Reverse RecoveryCharge 740 1100 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 12 60 |
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