NXP Semiconductors

BYC8-600P

Hyperfast power diode

BYC8-600P

All information provided in this document is subject to legal disclaimers.

© NXP N.V. 2014. All rights reserved

Product data sheet

3 January 2014

3 / 9

Symbol

Parameter

Conditions

Min

Max

Unit

pulse; Fig. 4

-

91

A

non-repetitive peak forward

current

pulse; Fig. 4

-

100

A

storage temperature

-65

175

°C

junction temperature

-

175

°C

003aaj898

0

12

8

4

8

16

24

(W)

0

δ = 1

0.5

0.2

0.1

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

0

8

6

2

4

003aaj899

8

12

4

16

20

(W)

0

a = 1.57

1.9

2.2

2.8

4.0

Fig. 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

-50

200

150

50

100

0

003aaj900

4

8

12

(A)

0

130 °C

Fig. 3. Average forward current as a function of

mounting base temperature; maximum values

003aaj902

(A)

10

P

t

Fig. 4. Non-repetitive peak forward current as a

function of pulse width; square waveform;

maximum values