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SK320 Datasheet(PDF) 1 Page - Mospec Semiconductor |
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SK320 Datasheet(HTML) 1 Page - Mospec Semiconductor |
1 / 2 page MOSPEC SK320 Surface Mount Schottky Barrier rectifiers Using the Schottky Barrier principle with a Molybdenum barrier meta. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O *In compliance with EU RoHs 2002/95/EC directives SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 200 VOLTS MAXIMUM RATINGS Characteristic Symbol SK320 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V RMS Reverse Voltage VR(RMS) 140 V Average Rectifier Forward Current IO 3.0 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 75 A Operating and Storage Junction Temperature Range TJ , TSTG -65 to +150 ℃ ELECTRICAL CHARACTERISTICS Characteristic Symbol SK320 Unit Maximum Instantaneous Forward Voltage ( IF =3.0 Amp.) VF 0.95 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃ ) ( Rated DC Voltage, TC = 125℃ ) IR 0.01 10 mA Maximum Thermal Resistance Junction to case RθJC 55 ℃ /W Typical Junction Capacitance ( Reverse Voltage of 4 volts & f=1 MHz ) CP 150 PF DO-214AC(SMA) MILLIMETERS DIM MIN MAX A 2.20 2.80 B 4.10 4.70 C 1.30 1.70 D 4.70 5.30 E 1.90 2.50 F -- 1.30 G -- 0.30 H 0.95 1.50 CASE--- Transfer molded plastic POLARITY--- Cathode indicated polarity band |
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Similar Description - SK320 |
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