NXPSC04650_15 datasheet(5/9 Pages) PHILIPS

Part #	NXPSC04650

Description	Silicon Carbide Diode

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

NXPSC04650

Silicon Carbide Diode

NXPSC04650

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Product data sheet

4 May 2015

5 / 9

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

IF = 4 A; Tj = 25 °C; Fig. 4

-

1.5

1.7

V

VF

forward voltage

IF = 4 A; Tj = 150 °C; Fig. 4

-

1.8

2.1

V

VR = 650 V; Tj = 25 °C

-

170

µA

IR

reverse current

VR = 650 V; Tj = 150 °C

-

550

µA

Dynamic characteristics

Qr

recovered charge

IF = 4 A; dIF/dt = 500 A/µs; VR = 400 V;

Tj = 25 °C; Fig. 5

-

7

-

nC

f = 1 MHz; VR = 1 V; Tj = 25 °C

-

130

-

pF

f = 1 MHz; VR = 300 V; Tj = 25 °C

-

16

-

pF

Cd

diode capacitance

f = 1 MHz; VR = 600 V; Tj = 25 °C

-

13

-

pF

VF (V)

0

4

3

1

2

aaa-014289

4

2

6

8

IF

(A)

0

(1)

(2)

(3)

(4)

Vo = 1.260 V; Rs = 0.211 Ω

(1) Tj = 25 °C; typical values

(2) Tj = 100 °C; typical values

(3) Tj = 150 °C; typical values

(4) Tj = 175 °C; typical values

Fig. 4. Forward current as a function of forward

voltage; typical values

Tj (°C)

0

175

150

50

100

aaa-014290

8

4

12

16

Qr

(nC)

0

Fig. 5. Recovered charge as a function of junction

temperature

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