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BYV79E Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYV79E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1;3 Semiconductors Product specification Rectifier diodes BYV79E series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 150 V/ 200 V • Fast switching • Soft recovery characteristic V F ≤ 0.9 V • Reverse surge capability • High thermal cycling performance I F(AV) = 14 A • Low thermal resistance I RRM ≤ 0.2 A t rr ≤ 30 ns GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYV79E series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV79E -150 -200 V RRM Peak repetitive reverse voltage - 150 200 V V RWM Crest working reverse voltage - 150 200 V V R Continuous reverse voltage T mb ≤ 145˚C - 150 200 V I F(AV) Average forward current 1 square wave - 14 A δ = 0.5; T mb ≤ 120 ˚C I FRM Repetitive peak forward current t = 25 μs; δ = 0.5; - 28 A T mb ≤ 120 ˚C I FSM Non-repetitive peak forward t = 10 ms - 150 A current t = 8.3 ms - 160 A sinusoidal; with reapplied V RWM(max) I RRM Repetitive peak reverse current t p = 2 μs; δ = 0.001 - 0.2 A I RSM Non-repetitive peak reverse t p = 100 μs - 0.2 A current T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 1. Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω k a 12 1 tab 2 July 1998 1 Rev 1.200 |
Similar Part No. - BYV79E_15 |
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Similar Description - BYV79E_15 |
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