AT-32032 datasheet(6/14 Pages) AVAGO

Part #	AT-32032

Description	Low Current, High Performance NPN Silicon Bipolar Transistor

Download	14 Pages

Scroll/Zoom	100%

Manufacturer	AVAGO [AVAGO TECHNOLOGIES LIMITED]

Direct Link	http://www.avagotech.com

Logo

6 / 14 page

6

AT-32032 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA

Freq.

GHz

S11

S21

S12

S22

Mag

Ang

dB

Mag

Ang

dB

Mag

Ang

Mag

Ang

0.5

0.484

-70

18.65

8.559

113

-25.51

0.053

62

0.680

-26

0.75

0.344

-88

16.04

6.339

98

-23.25

0.069

61

0.602

-28

1.0

0.257

-103

13.98

5.000

87

-21.46

0.085

61

0.561

-29

1.5

0.165

-130

10.90

3.509

70

-18.59

0.118

60

0.522

-33

2.0

0.124

-160

8.76

2.740

57

-16.29

0.153

57

0.502

-39

3.0

0.112

143

5.93

1.979

33

-12.69

0.232

48

0.477

-55

4.0

0.144

100

4.19

1.620

13

-9.89

0.320

37

0.454

-73

5.0

0.209

72

3.01

1.414

-7

-7.55

0.419

24

0.418

-95

6.0

0.296

57

2.14

1.279

-25

-5.58

0.526

8

0.353

-124

7.0

0.394

43

1.43

1.179

-43

-3.94

0.636

-10

0.275

-166

8.0

0.489

28

0.70

1.084

-61

-2.79

0.725

-30

0.270

137

9.0

0.564

10

-0.12

0.986

-78

-2.18

0.778

-50

0.355

91

10.0

0.627

-9

-1.05

0.886

-94

-2.10

0.786

-71

0.455

58

AT-32032 Typical Noise Parameters,

Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA

Freq.

GHz

Fmin

dB

Γopt

Rn

ohms

Gassoc

dB

Mag

Ang

0.9

0.23

71

7.5

15.6

1.8

1.2

0.295

138

5.1

11.5

2.0

1.2

0.31

152

4.6

10.4

2.5

1.3

0.35

-173

4.1

9.1

3.0

1.5

0.41

-142

5.8

8.2

3.5

1.7

0.47

-114

11.0

7.4

4.0

1.9

0.54

-93

20.0

6.7

gmax

dB(S[2,1])

k

0

25

15

20

5

10

0

2

1

3

4

5

6

0

1.25

0.75

1

0.25

0.5

FREQUENCY (GHz)

Figure 11. Gain vs. Frequency at 2.7 V, 5 mA.

Note: dB(|S21|) = 20 * log(|S21|)

gmax = maximum available gain (MAG) if k > 1

gmax = maximum stable gain (MSG) if k < 1

k = stability factor

MAG = S21 (k±

√k2–1)

S12

MSG = |S21| /|S12|

k =

1 – |S11| 2 – |S22|2 + |D|2

; D = S11S22 – S12S21

2*|S12| |S21|

Similar Part No. - AT-32032

Manufacturer	Part #	Datasheet	Description
Broadcom Corporation.	AT-32032	1Mb / 14P	Low Current, High Performance NPN Silicon Bipolar Transistor
Agilent(Hewlett-Packard...	AT-32032-BLK	166Kb / 14P	AT32032
Agilent(Hewlett-Packard...	AT-32032-TR1	166Kb / 14P	AT32032

More results

Similar Description - AT-32032

Manufacturer	Part #	Datasheet	Description
Agilent(Hewlett-Packard...	AT-32063	86Kb / 8P	Low Current, High Performance NPN Silicon Bipolar Transistor
AVAGO TECHNOLOGIES LIMI...	AT-32011	297Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
Broadcom Corporation.	AT-32063	218Kb / 8P	Low Current, High Performance NPN Silicon Bipolar Transistor
	AT-32011	297Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
	AT-32032	1Mb / 14P	Low Current, High Performance NPN Silicon Bipolar Transistor
Agilent(Hewlett-Packard...	AT-30511	101Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
Agilent(Hewlett-Packard...	AT-31011	137Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
AVAGO TECHNOLOGIES LIMI...	AT-31011	274Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor
Broadcom Corporation.	DEMO-AT32063	218Kb / 8P	Low Current, High Performance NPN Silicon Bipolar Transistor
Broadcom Corporation.	AT-31011	274Kb / 10P	Low Current, High Performance NPN Silicon Bipolar Transistor

More results

AT-32032 Datasheet(PDF) 6 Page - AVAGO TECHNOLOGIES LIMITED

AT-32032 Datasheet(HTML) 6 Page - AVAGO TECHNOLOGIES LIMITED

Similar Part No. - AT-32032

Similar Description - AT-32032

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL