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IR2131 Datasheet(PDF) 1 Page - International Rectifier

Part # IR2131
Description  3 HIGH SIDE AND 3 LOW SIDE DRIVER
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IR2131 Datasheet(HTML) 1 Page - International Rectifier

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3 HIGH SIDE AND 3 LOW SIDE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
160 mA / 360 mA
VOUT
10 - 20V
ton/off (typ.)
1.3 & 0.6
µs
Deadtime (typ.)
700
ns
Packages
www.irf.com
1
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
IR2131(J)(S) & (PbF)
28-Lead PDIP
28-Lead
SOIC
44-Lead PLCC
w/o 12 Leads
Data Sheet No. PD60032 rev P
Features
Floating channel designed for bootstrap operation
Fully operational to +600V Tolerant to negative
transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent 3 high side & 3 low side drivers
Matched propagation delay for all channels
2.5V logic compatible
Outputs out of phase with inputs
28-Lead SOIC & 44-Lead PLCC are also
available in Lead-Free.
Description
The IR2131(J)(S) is a high voltage, high speed power
MOSFET and IGBT driver with three independent high and
low side referenced output channels. Proprietary HVIC
technology enables ruggedized monolithic construction.
Logic inputs are compatible with CMOS or LSTTL outputs,
down to 2.5V logic. A current trip function which termi-
nates all six outputs can be derived from an external cur-
rent sense resistor. A shutdown input is provided for a
customized shutdown function. An open drain
FAULT
signal is provided to indicate that any of the shutdowns has
occurred. The output drivers feature a high pulse current
buffer stage designed for minimum driver cross-conduc-
tion. Propagation delays are matched to simplify use in high
frequency applications. The floating channels can be used
to drive N-channel power MOSFETs or IGBTs in the high
side configuration which operate up to 600 volts.


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