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2N5631 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N5631 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5631 DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS ・For high power audio amplifier and high voltage switching regulator circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 5.0 A PD Total Power Dissipation TC=25℃ 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 0.875 ℃/W JMnic |
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Similar Description - 2N5631_15 |
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