2N5631_15 datasheet(1/3 Pages) JMNIC

Part #	2N5631

Description	Silicon NPN Power Transistors

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Product Specification

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Silicon NPN Power Transistors

2N5631

DESCRIPTION

・With TO-3 package

・Complement to type 2N6031

・High collector-emitter sustaining voltage

・High DC current gain

・Low collector-emitter saturation voltage

APPLICATIONS

・For high power audio amplifier and

high voltage switching regulator

circuits applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

140

V

VCEO

Collector-emitter voltage

Open base

140

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

16

A

ICM

Collector current-peak

20

A

IB

Base current

5.0

A

PD

Total Power Dissipation

TC=25℃

200

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

0.875

℃/W

JMnic

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2N5631 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd.

2N5631 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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