S

D

G

Description

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve the lowest possible

on-resistance per silicon area. This benefit, combined with the

fastswitchingspeedandruggedizeddevicedesignthatHEXFET

Power MOSFETs are well known for, provides the designer with

an extremely efficient device for use in a wide variety of

applications.

The D-PAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight lead

version (IRFU series) is for through-hole mounting applications.

Power dissipation levels up to 1.5 watts are possible in typical

surface mount applications.

IRLR120NPbF

IRLU120NPbF

Parameter

Max.

Units

10

7.0

A

Pulsed Drain Current

†

35

Power Dissipation

48

W

Linear Derating Factor

0.32

W/°C

Gate-to-Source Voltage

± 16

V

Single Pulse Avalanche Energy

‚†

85

mJ

Avalanche Current

†

6.0

A

Repetitive Avalanche Energy

†

4.8

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

1

Submit Datasheet Feedback

July 9, 2014

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

3.1

Junction-to-Ambient (PCB mount) **

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

D-Pak

IRLR120NPbF

G

S

D

D

S

G

I-Pak

IRLU120NPbF

Form

Quantity

Tube

75

IRLR120NPbF

Tape and Reel

2000

IRLR120NTRPbF

Tape and Reel Left

3000

IRLR120NTRLPbF

Tape and Reel Right

3000

IRLR120NTRRPbF

EOL notice # 289

IRLU120NPbF

IPak

Tube

75

IRLU120NPbF

Note

Package Type

Standard Pack

Orderable Part Number

Base Part Number

IRLR120NPbF

D-Pak