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BQ24133 Datasheet(PDF) 11 Page - Texas Instruments |
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BQ24133 Datasheet(HTML) 11 Page - Texas Instruments |
11 / 40 page bq24133 www.ti.com SLUSAF7C – DECEMBER 2010 – REVISED APRIL 2015 Electrical Characteristics (continued) 4.5 V ≤ V(PVCC, AVCC) ≤ 17 V, –40°C < TJ + 125°C, typical values are at TA = 25°C, with respect to AGND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INTERNAL PWM fsw PWM Switching Frequency 1360 1600 1840 kHz Dead time when switching between LSFET tSW_DEAD Driver Dead Time(1) 30 ns and HSFET no load RDS_HI High-Side MOSFET ON-Resistance VBTST – VSW = 4.5 V 80 150 m Ω RDS_LO Low-Side MOSFET ON-Resistance 95 160 m Ω VBTST – VSW when low-side refresh pulse is 3 requested, VAVCC = 4.5 V Bootstrap Refresh Comparator Threshold VBTST_REFRESH V Voltage VBTST – VSW when low-side refresh pulse is 4 requested, VAVCC > 6 V INTERNAL SOFT START (8 steps to regulation current ICHG) SS_STEP Soft start steps 8 step TSS_STEP Soft start step time 1.6 3 ms CHARGER SECTION POWER-UP SEQUENCING Delay from ISET above 120 mV to start tCE_DELAY 1.5 s charging battery INTEGRATED BTST DIODE VF Forward Bias Voltage IF=120 mA at 25°C 0.85 V VR Reverse breakdown voltage IR=2 µA at 25°C 20 V LOGIC IO PIN CHARACTERISTICS VOUT_LO STAT Output Low Saturation Voltage Sink Current = 5 mA 0.5 V VCELL_LO CELL pin input low threshold, 1 cell CELL pin voltage falling edge 0.5 V CELL pin voltage rising for MIN, falling for VCELL_MID CELL pin input mid threshold, 2 cells 0.8 1.8 V MAX VCELL_HI CELL pin input high threshold, 3 cells CELL pin voltage rising edge 2.5 V Copyright © 2010–2015, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: bq24133 |
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