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MTEF1P15AN6 Datasheet(PDF) 3 Page - Cystech Electonics Corp.

Part # MTEF1P15AN6
Description  P-Channel Enhancement Mode Power MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTEF1P15AN6 Datasheet(HTML) 3 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 3/9
MTEF1P15AN6
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
1
2
3
4
5
6
7
024
68
10
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
-VDS, Drain-Source Voltage(V)
10V
9V
8V
7V
6V
-VGS=5V
ID=-250μA,
V
-VGS=4V
=0V
GS
Static Drain-Source On-State resistance vs Drain Current
100
1000
10000
0.01
0.1
1
10
-ID, Drain Current(A)
VGS=-10V
VGS=-6V
VGS=-4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
024
68
1
-IDR, Reverse Drain Current (A)
0
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
500
600
700
800
900
1000
1100
1200
02
46
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-60
-20
20
60
100
140
180
Tj, Junction Temperature(°C)
-VGS, Gate-Source Voltage(V)
ID=-1.4A
VGS=-10V, ID=-1.4A
RDSON @Tj=25°C: 554mΩ


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