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MTEJ0P20V8 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTEJ0P20V8
Description  P-Channel Enhancement Mode Power MOSFET
Download  10 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTEJ0P20V8 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C897V8
Issued Date : 2014.03.20
Revised Date :
Page No. : 5/10
MTEJ0P20V8
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
1
2
3
4
5
6
0
4
8
12
16
20
-VDS, Drain-Source Voltage(V)
-VGS=4V
10V
9V
8V
7V
6V
5V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.1
1
10
-ID, Drain Current(A)
VGS=-10V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02
46
8
1
-IDR, Reverse Drain Current(A)
0
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
2
4
6
8
10
024
68
10
Drain-Source On-State Resistance vs Junction Tempearture
0
0.4
0.8
1.2
1.6
2
2.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-10V, ID=-1A
RDS(ON)@Tj=25°C : 0.8Ω typ.
-VGS, Gate-Source Voltage(V)
ID=-1A


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