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BQ24266RGER Datasheet(PDF) 7 Page - Texas Instruments

Part # BQ24266RGER
Description  bq24266 3A, 30V Standalone Single-Input, Single-Cell Switchmode Li-Ion Battery Charger
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ24266RGER Datasheet(HTML) 7 Page - Texas Instruments

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bq24266
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SLUSBY5F – JUNE 2014 – REVISED AUGUST 2015
6.4 Thermal Information
bq24266
THERMAL METRIC(1)
UNIT
RGE
(24 PINS)
RθJA
Junction-to-ambient thermal resistance
32.6
RθJC(top)
Junction-to-case (top) thermal resistance
30.5
RθJB
Junction-to-board thermal resistance
3.3
°C/W
ψJT
Junction-to-top characterization parameter
0.4
ψJB
Junction-to-board characterization parameter
9.3
RJC(bot)
Junction-to-case (bottom) thermal resistance
2.6
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
Circuit of , VUVLO < VIN < VOVP AND VIN > VBAT+ VSLP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless otherwise
noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT CURRENTS
VUVLO < VIN < VOVP and VIN>VBAT+VSLP
15
PWM switching
mA
IIN
Supply current for control
VUVLO < VIN < VOVP and VIN>VBAT+VSLP
6.65
PWM NOT switching
0°C< TJ < 85°C, VIN = 5V, High-Z Mode
250
μA
0°C< TJ < 85°C, VBAT = 4.2 V, VIN = 5V,
15
Battery discharge current in
SCL, SDA = 0V or 1.8V, High-Z Mode
IBAT_HIZ
High Impedance mode, (BAT,
μA
0°C< TJ < 85°C, VBAT = 4.2 V, VIN = 0V,
SW, SYS)
80
SCL, SDA = 0V or 1.8V
POWER-PATH MANAGEMENT
VMINSYS
VMINSYS
VMINSYS
VSYSREG(LO)
System Regulation Voltage
VBAT < VMINSYS, battery attached
V
+ 80mV
+ 100mV
+ 120mV
Battery FET turned off, no charging,
VBATREG
VBATREG
VBATREG
VSYSREG(HI)
System Regulation Voltage
V
VBAT > 3.5V
+2.2%
+2.5%
+2.77%
Minimum System Voltage
VMINSYS
VBAT + VDO(SYS_BAT) < 3.5V
3.44
3.5
3.55
V
Regulation Threshold
Deglitch time, VMINSYS
tDGL(MINSYS_CMP)
8
ms
comparator rising
Enter supplement mode
VBAT
VBSUP1
VBAT > VBUVLO
V
threshold
20mV
Exit supplement mode
VBAT
VBSUP2
VBAT > VBUVLO
V
threshold
5mV
Current Limit, Discharge or
ILIM(DISCH)
VLIM(BGATE) = VBAT – VSYS
4
6
A
Supplement Mode
Deglitch Time, OUT Short
tDGL(SC1)
Circuit during Discharge or
Measured from IBAT = 7A to FET off
250
μs
Supplement Mode
Recovery time, OUT Short
tREC(SC1)
Circuit during Discharge or
2
s
Supplement Mode
Battery Range for BGATE
2.5
4.5
V
Operation
Copyright © 2014–2015, Texas Instruments Incorporated
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