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MTN4N65BFP Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTN4N65BFP Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C990FP Issued Date : 2015.04.07 Revised Date : Page No. : 4/ 9 MTN4N65BFP CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) VGS=4.5V 10V,9V,8V,7V,6V VGS=5V Brekdown Voltage vs Ambient Temperature 0.6 0.7 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0 1 2 3 4 5 0.001 0.01 0.1 1 10 ID, Drain Current(A) VGS=10V Drain Current vs Gate-Source Voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 02468 10 VGS, Gate-Source Voltage(V) TA=25°C VDS=10V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 2 4 6 8 10 12 14 02468 10 Ta=25°C VGS, Gate-Source Voltage(V) ID=2A Forward Drain Current vs Source-Drain Voltage 0.001 0.01 0.1 1 10 00.2 0.4 0.6 0.811.2 VSD, Source Drain Voltage(V) VGS=0V Tj=25°C Tj=150°C |
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