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MTP2305AN3 Datasheet(PDF) 4 Page - Cystech Electonics Corp. |
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MTP2305AN3 Datasheet(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 4/9 MTP2305AN3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 5 10 15 20 25 012 345 -VDS, Drain-Source Voltage(V) -VGS=5V -VGS=2V -VGS=3V -VGS=4V -VGS=1V Brekdown Voltage vs Ambient Temperature 15 20 25 30 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) -VGS=1.5V -VGS=4.5V -VGS=2.5V -VGS=2V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 1 -IDR, Reverse Drain Current (A) 0 Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 40 80 120 160 200 240 280 320 360 400 0 12 345 -VGS, Gate-Source Voltage(V) ID=-2.8A Drain-Source On-State Resistance vs Junction Tempearture 20 40 60 80 100 120 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) VGS=-4.5V, ID=-2.8A |
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