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2SC2582 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC2582 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC2582 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=2mA ;IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 45 V VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V ICEO Collector cut-off current VCE=20V; IB=0 100 μA ICBO Collector cut-off current VCB=20V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=500mA ; VCE=10V 85 340 hFE-2 DC current gain IC=1A ; VCE=5V 50 COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=50mA ; VCE=10V 200 MHz hFE-1 Classifications Q R S 85-170 120-240 170-340 |
Similar Part No. - 2SC2582_15 |
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Similar Description - 2SC2582_15 |
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