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IRFE9220 Datasheet(PDF) 2 Page - International Rectifier |
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IRFE9220 Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page IRFE9220 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 9.1 RthJ-PCB Junction to PC Board — — 26""" Soldered to a copper clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -2.1 ISM Pulse Source Current (Body Diode) ➀ — — -8.4 VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS = -2.1A, VGS = 0V ➃ trr Reverse Recovery Time — — 3 0 0 nS Tj = 25°C, IF = -2.1A, di/dt ≤-100A/µs QRR Reverse Recovery Charge — — 3.0 µc VDD ≤ -50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.22 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 1.5 VGS = -10V, ID = -1.5A➃ Resistance — — 1.725 VGS = -10V, ID = -2.1A ➃ VGS(th) Gate Threshold Voltage -2.0 — - 4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 1.0 — — S ( ) VDS > -15V, IDS =-1.5A➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS= -160V, VGS= 0V — — -250 VDS =-160V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS =-20V IGSS Gate-to-Source Leakage Reverse — — 1 0 0 VGS =20V Qg Total Gate Charge — — 1 5 VGS =-10V, ID= -2.1A Qgs Gate-to-Source Charge — — 3.2 nC VDS =-100V Qgd Gate-to-Drain (‘Miller’) Charge — — 8.4 td(on) Turn-On Delay Time — — 5 0 VDD =-100V, ID = -2.1A, t r Rise Time — — 7 0 RG =7.5Ω td(off) Turn-Off Delay Time — — 4 0 tf Fall Time — — 5 0 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 3 3 0 VGS = 0V, VDS = -25V Coss Output Capacitance — 1 0 0 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 3 3 — nA nH ns µA Ω Measured from the center of drain pad to center of source pad |
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