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IRFG5210 Datasheet(PDF) 3 Page - International Rectifier |
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IRFG5210 Datasheet(HTML) 3 Page - International Rectifier |
3 / 12 page www.irf.com 3 IRFG5210 For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -0.61 ISM Pulse Source Current (Body Diode) ➀ — — -2.4 VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS = -0.68A, VGS = 0V ➃ trr Reverse Recovery Time — — 120 nS Tj = 25°C, IF = -0.68A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 420 nC VDD ≤ -50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 17 RthJA Junction-to-Ambient — — 90 Typical socket mount °C/W Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.22 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 1.6 VGS = -10V, ID = -0.4A Resistance — — 1.83 VGS = -10V, ID =- 0.68A VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -0.25mA gfs Forward Transconductance 0.64 — — S ( )VDS > -15V, IDS = -0.4A ➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS= -160V, VGS= 0V — — -250 VDS = -160V, VGS = 0V, TJ =125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = - 20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V Qg Total Gate Charge — — 18 VGS = -10V, ID = -0.68A, Qgs Gate-to-Source Charge — — 2.8 nC VDS = -100V Qgd Gate-to-Drain (‘Miller’) Charge — — 8.4 td(on) Turn-On Delay Time — — 15 VDD = -100V, ID = -0.68A, tr Rise Time — — 11 VGS = -10V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 36 tf Fall Time — — 43 LS + LD Total Inductance — 10 — Ciss Input Capacitance — 320 — VGS = 0V, VDS = -25V Coss Output Capacitance — 110 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 20 — nA ➃ nH ns µA Ω Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) |
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