BLC8G22LS-450AV_15 datasheet(6/15 Pages) PHILIPS

Part #	BLC8G22LS-450AV

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLC8G22LS-450AV

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Product data sheet

Rev. 3 — 2 June 2015

6 of 15

NXP Semiconductors

BLC8G22LS-450AV

Power LDMOS transistor

[1]

ZS and ZL defined in Figure 1.

[2]

At 3 dB gain compression.

8.4 Test circuit

Table 14.

Typical impedance of peak device at 1 : 1 load

Measured load-pull data of main device; IDq = 2300 mA (main); VDS = 28 V; pulsed CW (tp = 100 s;

 =10 %).

f

ZS [1]

ZL [1]

PL(3dB) [2]



D

[2]

Gp [2]

(MHz)

(

)

(

)

(W)

(%)

(dB)

2110

0.7

 j5.8

2.2

 j6.4

309

54.0

16.9

2140

0.9

 j6.0

2.2

 j6.2

309

54.0

17.3

2170

1.3

 j6.4

2.2

 j6.1

309

54.0

17.2

Table 15.

Off-state impedances of peak device

f

Zoff

(MHz)

(

)

2110

0.5

 j3.4

2140

0.5

 j3.6

2170

0.5

 j3.8

Printed-Circuit Board (PCB): Rogers 4350B:



r = 3.66; thickness = 0.508 mm; thickness copper

plating = 35

m. See Table 16 for a list of components.

Fig 2.

Component layout

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