BLC8G27LS-210PV_15 datasheet(3/15 Pages) PHILIPS

Part #	BLC8G27LS-210PV

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLC8G27LS-210PV

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Product data sheet

Rev. 1 — 9 February 2015

3 of 15

NXP Semiconductors

BLC8G27LS-210PV

Power LDMOS transistor

6.

Characteristics

7.

Test information

7.1 Ruggedness in class-AB operation

The BLC8G27LS-210PV is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =28 V;

IDq = 1730 mA; PL = 200 W (CW); f = 2600 MHz.

7.2 Impedance information

[1]

ZS and ZL defined in Figure 1.

Table 6.

DC characteristics

Tj = 25 C per section, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

V(BR)DSS drain-source breakdown voltage

VGS =0V; ID =1.44mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS = 10 V; ID = 144 mA

1.5

1.9

2.3

V

VGSq

gate-source quiescent voltage

VDS = 28 V; ID = 865 mA

1.6

2

2.4

V

IDSS

drain leakage current

VGS =0V; VDS =28V

-

2.8

A

IDSX

drain cut-off current

VGS =VGS(th) + 3.75 V;

VDS =10V

-

26.9

-

A

IGSS

gate leakage current

VGS =11V; VDS = 0 V

-

280

nA

gfs

forward transconductance

VDS =10V; ID = 7.2 A

-

11.2

-

S

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =5.4 A

-0.10

-



Table 7.

RF characteristics

Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %

probability on the CCDF; f1 = 2602.5 MHz; f2 = 2607.5 MHz; f3 = 2692.5 MHz; f4 = 2697.5 MHz;

RF performance at VDS =28V; IDq =1730mA; Tcase =25 C; unless otherwise specified; in a water

cooled class-AB test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Gp

power gain

PL(AV) =65W

15.8

17

-

dB



D

drain efficiency

PL(AV) =65W

27

30

-

%

RLin

input return loss

PL(AV) =65W

-

13

8dB

ACPR5M adjacent channel power ratio (5 MHz)

PL(AV) =65W

-

29

26

dBc

Table 8.

Typical impedance

Measured load-pull data per section; IDq = 865 mA; VDS = 28 V.

f

ZS [1]

ZL[1]

(MHz)

(

)

(

)

2500

2.58

 j5.80

1.60

 j4.32

2600

3.40

 j6.30

1.65

 j4.44

2700

6.35

 j6.45

1.77

 j4.75

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