BLF6G15L-40RN_15 datasheet(3/12 Pages) PHILIPS

Part #	BLF6G15L-40RN

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLF6G15L-40RN_6G15LS-40RN

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Product data sheet

Rev. 2 — 14 May 2012

3 of 12

NXP Semiconductors

BLF6G15L(S)-40RN

Power LDMOS transistor

6.

Characteristics

7.

Application information

7.1 Ruggedness in Class-AB operations

The BLF6G15L-40RN and the BLF6G15LS-40RN are capable of withstanding a load

mismatch corresponding to VSWR 10 : 1 through all phases under following conditions:

VDS =28V; IDq =375 mA; PL = 40 W; f = 1476 MHz (CW).

8.

Test information

8.1 Impedance information

Table 6.

Characteristics

Tj = 25 C per section; unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown voltage

VGS =0 V; ID =0.59mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID =59mA

1.4

1.8

2.4

V

IDSS

drain leakage current

VGS =0 V; VDS =28V

-

1.4

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

-9.4

-

A

IGSS

gate leakage current

VGS =11 V; VDS =0V

-

140

nA

gfs

forward transconductance

VDS =10 V; ID = 58.9 mA

-

0.5

-

S

RDS(on)

drain-source on-state resistance

VGS =VGS(th) + 3.75 V;

ID =2.06A

-0.32 -



Table 7.

2-carrier W-CDMA RF performance

Class-AB production test circuit; PAR 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz;

3GPP test model 1; 64 DPCH; f1 = 1476 MHz; f2 = 1511 MHz; RF performance at VDS =28V;

IDq = 375 mA; Tcase = 25 C; unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PL(AV)

average output power

-

2.5

-

W

Gp

power gain

PL(AV) = 2.5 W

19.8

22.5

-

dB

RLin

input return loss

PL(AV) = 2.5 W

-

16

11

dB



D

drain efficiency

PL(AV) = 2.5 W

11.5

13.5

-

%

ACPR

adjacent channel power ratio

PL(AV) = 2.5 W

-

45

40

dBc

Table 8.

Typical impedance

Measured load-pull data. Typical values per section. IDq = 330 mA; main transistor VDS =28 V

ZS and ZL defined in Figure 1.

f

ZS

ZL

(MHz)

(

)

(

)

1450

4.4

 j5.9

5.5

 j4.6

1480

4.4

 j4.1

5.0

 j5.0

1510

6.4

 j4.7

5.0

 j5.0

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