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IRH7054 Datasheet(PDF) 2 Page - International Rectifier |
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IRH7054 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page 2 www.irf.com IRH7054 IRH7054 IRH7054 IRH7054 IRH7054 Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Source-Drain Diode Ratings and Characteristics Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions IS Continuous Source Current (Body Diode) 45 ISM Pulse Source Current (Body Diode) ➀ 210 VSD Diode Forward Voltage 1.4 V Tj = 25°C, IS = 35A, VGS = 0V ➃ trr Reverse Recovery Time 280 nS Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge 2.2 µC VDD ≤ 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Thermal Resistance Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions RthJC Junction-to-Case 0.83 RthJA Junction-to-Ambient 30 °C/W Typical socket mount RthCS Case-to-Sink 0.12 Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) @ Tj = 25°C (Unless Otherwise Specified) Parameter Parameter Parameter Parameter Parameter Min Min Min Min Min Typ Typ Typ Typ Typ Max Max Max Max Max Units Units Units Units Units Test Conditions Test Conditions Test Conditions Test Conditions Test Conditions BVDSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown 0.053 V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.025 Ω VGS = 12V, ID = 32A Resistance 0.028 VGS = 12V, ID = 45A VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 12 S ( )VDS > 15V, IDS = 35A ➃ IDSS Zero Gate Voltage Drain Current 25 VDS= 48V ,VGS=0V 250 VDS = 48V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge 200 VGS =12V, ID = 35A Qgs Gate-to-Source Charge 60 nC VDS = 30V Qgd Gate-to-Drain (Miller) Charge 75 td(on) Turn-On Delay Time 27 VDD =30V, ID = 35A tr Rise Time 100 VGS =12V, RG = 2.35Ω td(off) Turn-Off Delay Time 75 tf Fall Time 75 LS + LD Total Inductance 10 Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from Package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance 4100 VGS = 0V, VDS = 25V Coss Output Capacitance 2000 pF f = 1.0MHz Crss Reverse Transfer Capacitance 560 nA ➃ nH ns µA |
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