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IRH7054 Datasheet(PDF) 1 Page - International Rectifier |
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IRH7054 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Parameter Parameter Parameter Parameter Parameter Units Units Units Units Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 45* ID @ VGS = 12V, TC = 100°C Continuous Drain Current 32 IDM Pulsed Drain Current ➀ 210 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 500 mJ IAR Avalanche Current ➀ 35 A EAR Repetitive Avalanche Energy ➀ 15 mJ dv/dt Peak Diode Recovery dv/dt ➂ 3.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 11.5 (Typical ) g Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation International Rectifiers RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET THRU-HOLE THRU-HOLE THRU-HOLE THRU-HOLE THRU-HOLE (T0-204AA/AE) (T0-204AA/AE) (T0-204AA/AE) (T0-204AA/AE) (T0-204AA/AE) 8/9/01 www.irf.com 1 Product Summary Product Summary Product Summary Product Summary Product Summary Part Number Part Number Part Number Part Number Part Number Radiation Level Radiation Level Radiation Level Radiation Level Radiation Level R R R R RDS(on) DS(on) DS(on) DS(on) DS(on) IIIIIDDDDD IRH7054 100K Rads (Si) 0.025Ω 45*A IRH3054 300K Rads (Si) 0.025Ω 45*A IRH4054 600K Rads (Si) 0.025Ω 45*A IRH8054 1000K Rads (Si) 0.025Ω 45*A For footnotes refer to the last page *Current is limited by pin diameter IRH7054 IRH7054 IRH7054 IRH7054 IRH7054 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL 60V, N-CHANNEL RAD Hard RAD Hard RAD Hard RAD Hard RAD Hard HEXFET HEXFET HEXFET HEXFET HEXFET ® TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE Features: Features: Features: Features: Features: ! Single Event Effect (SEE) Hardened ! Low RDS(on) ! Low Total Gate Charge ! Proton Tolerant ! Simple Drive Requirements ! Ease of Paralleling ! Hermetically Sealed ! Ceramic Package ! Light Weight PD - 90883B |
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