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BLF7G21L-160P Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF7G21L-160P Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page BLF7G21L-160P_7G21LS-160P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved. Product data sheet Rev. 3 — 10 February 2014 5 of 15 NXP Semiconductors BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor 7.3 1-Carrier W-CDMA VDS = 28 V; IDq = 1080 mA. (1) f = 1930 MHz (2) f = 1960 MHz (3) f = 1990 MHz VDS = 28 V; IDq = 1080 mA. (1) f = 1930 MHz (2) f = 1960 MHz (3) f = 1990 MHz Fig 2. Power gain and drain efficiency as function of load power; typical values Fig 3. Adjacent channel power ratio (5 MHz) and adjacent channel power ratio (10 MHz) as a function of load power; typical values VDS = 28 V; IDq = 1080 mA. (1) f = 1930 MHz (2) f = 1960 MHz (3) f = 1990 MHz Fig 4. Peak-to-average ratio as a function of load power; typical values |
Similar Part No. - BLF7G21L-160P_15 |
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Similar Description - BLF7G21L-160P_15 |
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